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BUT11AF Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUT11AF Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUT11AF DESCRIPTION · ·High Voltage ·High Speed Switching APPLICATIONS ·Converters ·Inverters ·Switching regulators ·Motor control systems ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1000 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB B Base Current 2 A IBM Base Current-Peak 4 A PC Collector Power Dissipation @TC=25℃ 40 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 3.125 K/W isc Website:www.iscsemi.cn |
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