BUX41 datasheet(1/2 Pages) ISC

Il numero della parte	BUX41

Spiegazioni elettronici	isc Silicon NPN Power Transistor

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Produttore elettronici	ISC [Inchange Semiconductor Company Limited]

Homepage	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistor

BUX41

DESCRIPTION

· Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = 200V(Min)

·High Current Capability

·Good Linearity of hFE

APPLICATIONS

·Designed for high speed, high current, high power

applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

250

V

VCEO(SUS)

Collector-Emitter Voltage

200

V

VCEX

Collector-Emitter Voltage VBE= -2.5V

250

V

VCER

Collector-Emitter Voltage RBE= 100Ω

240

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

15

A

ICM

Collector Current-Peak

20

A

IB

B

Base Current-Continuous

3

A

PC

Collector Power Dissipation

@TC=100℃

120

W

TJ

Junction Temperature

200

℃

Tstg

Storage Temperature

-65~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

1.46

℃/W

isc Website：www.iscsemi.cn

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