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MJ802 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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MJ802 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ802 DESCRIPTION ·High DC Current Gain- : hFE= 25-100@IC= 7.5A ·Excellent Safe Operating Area ·Complement to Type MJ4502 APPLICATIONS ·Designed for use as an output device in complementary audio amplifiers to 100-Watts music power per channel. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 90 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous 30 A IB B Base Current-Continuous 7.5 A PC Collector Power Dissipation@TC=25℃ 200 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.875 ℃/W isc Website:www.iscsemi.cn |
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