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STU313D Scheda tecnica(PDF) 2 Page - SamHop Microelectronics Corp.

Il numero della parte STU313D
Spiegazioni elettronici  Dual Enhancement Mode Field Effect Transistor (N and P Channel)
PDF  11 Pages
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Produttore elettronici  SAMHOP [SamHop Microelectronics Corp.]
Homepage  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STU313D Scheda tecnica(HTML) 2 Page - SamHop Microelectronics Corp.

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background image
4 Symbol
Min
Typ
Max
Units
BVDSS
30
V
1
IGSS
±10
uA
VGS(th)
1
V
19
gFS
14
S
VSD
CISS
440
pF
COSS
130
pF
CRSS
70
pF
Qg
10
nC
11.5
nC
Qgs
17
nC
Qgd
22
tD(ON)
8.3
ns
tr
1.4
ns
tD(OFF)
2.1
ns
tf
ns
Gate-Drain Charge
VDS=15V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=15V
ID=1A
VGS=10V
RGEN=6 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
VDS=15V,ID=8A,VGS=10V
Fall Time
Turn-On Delay Time
m ohm
VGS=10V , ID=8A
VDS=5V , ID=8A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
uA
Gate Threshold Voltage
VDS=VGS , ID=250uA
VDS=24V , VGS=0V
VGS= ±20V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
N-Channel ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
3
VGS=4.5V , ID=6.5A
24
26
35
m ohm
c
f=1.0MHz
c
VDS=15V,ID=8A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VGS=0V,IS=1A
0.77
1.3
V
STU313D
Ver 1.0
www.samhop.com.tw
Jul,30,2008
2
nC
VDS=15V,ID=8A,VGS=4.5V
4.3
2
b
IS
Maximum Continuous Drain-Source Diode Forward Current
A
1



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