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2N6049 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2N6049 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6049 DESCRIPTION ·With TO-66 package ·Complement to type 2N3054A APPLICATIONS ·Designed for general purpose switching and amplifier applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -90 V VCEO Collector-emitter voltage Open base -55 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -4 A ICM Collector current-peak -10 A IB Base current -2 A PD Power dissipation TC=25℃ 75 W Tj Junction temperature 200 ℃ Tstg Storage temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-C Thermal resistance junction to case 2.33 ℃/W Fig.1 simplified outline (TO-66) and symbol |
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