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2SC1102 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC1102 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC1102 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1mA ; IB=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=1μA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=20mA; IB=2mA 1.0 V VBEsat Base-emitter saturation voltage IC=20mA; IB=2mA 1.5 V ICEO Collector cut-off current VCE=200V; IB=0 1 μA IEBO Emitter cut-off current VEB=5V; IC=0 1 μA hFE DC current gain IC=10mA ; VCE=10V 40 200 fT Transition frequency IC=10mA ; VCE=20V 60 MHz |
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