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2SC1391 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC1391 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC1391 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=50μA ;IE=0 300 V V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;IB=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=50μA ;IC=0 5 V VCEsat Collector-emitter saturation voltage IC=50mA ;IB=5mA 2.0 V ICBO Collector cut-off current VCB=300V;IE=0 5 μA IEBO Emitter cut-off current VEB=7V; IC=0 5 μA hFE DC current gain IC=50mA ; VCE=10V 30 160 fT Transition frequency IC=10mA ; VCE=20V 25 MHz |
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