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2SC1449 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC1449 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC1449 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=100μA;IE=0 40 V V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 35 V V(BR)EBO Emitter-base breakdown voltage IE=100μA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=500mA ;IB=50m A 0.7 V VBEsat Base-emitter saturation voltage IC=500mA ;IB=50m A 1.5 V hFE DC current gain IC=300mA ; VCE=2V 40 250 ICBO Collector cut-off current VCB=35V; IE=0 0.5 μA IEBO Emitter cut-off current VEB=4V; IC=0 0.5 μA COB Output capacitance IE=0; VCB=10V;f=1MHz 20 pF fT Transition frequency IC=100mA ; VCE=5V 55 MHz |
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