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2SC2437 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC2437 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC2437 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 450 V V(BR)EBO Emitter-base breakdown voltage IE=0.1mA ;IC=0 7 V VCEsat Collector-emitter saturation voltage IC=7A; IB=1.4A 1.5 V VBEsat Base-emitter saturation voltage IC=7A; IB=1.4A 1.2 V ICBO Collector cut-off current VCB=450V; IE=0 1.0 mA IEBO Emitter cut-off current VEB=7V; IC=0 0.1 mA hFE DC current gain IC=3A ; VCE=4V 10 Switching times ton Turn-on time 1.5 μs tstg Storage time 3.0 μs tf Fall time IC=7A; IB1=-IB2=1.4A RL=30Ω;PW=20μs;Duty≤2% 1.5 μs |
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