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2SC3831 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC3831 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC3831 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA; IB=0 500 V VCEsat Collector-emitter saturation voltage IC=5A IB=1.0A 0.5 V VBEsat Base-emitter saturation voltage IC=5A ;IB=1.0A 1.3 V ICBO Collector cut-off current VCB=600V; IE=0 1 mA IEBO Emitter cut-off current VEB=10V; IC=0 0.1 mA hFE DC current gain IC=5A ; VCE=4V 10 30 fT Transition frequency IC=1A ; VCE=12V 8 MHz COB Output capacitance f=1MHz ; VCB=10V 105 pF Switching times ton Turn-on time 1.0 μs tstg Storage time 4.5 μs tf Fall time IC=5A; VCC=200V IB1=0.5A; IB2=-1A RL=40Ω 0.5 μs |
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