2SD600 datasheet(1/4 Pages) ISC

Il numero della parte	2SD600

Spiegazioni elettronici	Silicon NPN Power Transistors

PDF	4 Pages

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Produttore elettronici	ISC [Inchange Semiconductor Company Limited]

Homepage	http://www.iscsemi.cn

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SD600 2SD600K

DESCRIPTION

·

·With TO-126 package

·Complement to type 2SB631/631K

·High breakdown voltage VCEO100/120V

·High current 1A

·Low saturation voltage

APPLICATIONS

·For low-frequency power amplifier

applications

PINNING

DESCRIPTION

1

Emitter

2

Collector;connected to

mounting base

3

Base

Absolute maximum ratings(Ta=25℃)

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

2SD600

100

VCBO

Collector-base voltage

2SD600K

Open emitter

120

V

2SD600

100

VCEO

Collector-emitter voltage

2SD600K

Open base

120

V

VEBO

Emitter-base voltage

Open collector

5

V

IC

Collector current (DC)

1

A

ICM

Collector current-peak

2

A

Ta=25℃

1

PD

Total power dissipation

TC=25℃

8

W

Tj

Junction temperature

150

℃

Tstg

Storage temperature

-55~150

℃

Codice articolo simile - 2SD600

Produttore elettronici	Il numero della parte	Scheda tecnica	Spiegazioni elettronici
Sanyo Semicon Device	2SD600	106Kb / 3P	100V/120V, 1A Low-Frequency Power Amp Applications
Sanyo Semicon Device	2SD600	126Kb / 4P	100V/120V, 1A Low-Frequency Power Amplifier Applications
Inchange Semiconductor ...	2SD600	168Kb / 3P	isc Silicon NPN Power Transistor
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ON Semiconductor	2SD600	94Kb / 4P	Power Amplifier Applications Jan-2011, Rev. 0

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2SD600 Scheda tecnica(PDF) 1 Page - Inchange Semiconductor Company Limited

2SD600 Scheda tecnica(HTML) 1 Page - Inchange Semiconductor Company Limited

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