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2SD772A Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD772A Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD772 2SD772A 2SD772B CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A; L=25mH 80 V VCEsat Collector-emitter saturation voltage IC=5A; IB=1A 1.6 V VBE Base-emitter on voltage IC=5A ; VCE=4V 1.5 V 2SD772 VCB=150V; IE=0 2SD772A VCB=200V; IE=0 ICBO Collector cut-off current 2SD772B VCB=250V; IE=0 1.0 mA IEBO Emitter cut-off current VEB=6V; IC=0 0.1 mA hFE DC current gain IC=5A ; VCE=4V 14 tf Fall time IC=5A ; VEB=-5V, IB1=0.8A 1 μs fT Transition frequency IC=0.5A ; VCE=10V 40 MHz 2 |
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