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2SD880 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD880 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD880 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;IB=0 60 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7 V VCEsat Collector-emitter saturation voltage IC=3A; IB=0.3A 1.0 V VBE Base-emitter on voltage IC=0.5A ; VCE=5V 1.0 V ICBO Collector cut-off current VCB=60V; IE=0 100 μA IEBO Emitter cut-off current VEB=7V; IC=0 100 μA hFE DC current gain IC=0.5A ; VCE=5V 60 300 fT Transition frequency IC=0.5A ; VCE=5V;f=1MHz 3 MHz Switching times ton Turn-on time 1.2 μs ts Storage time 2.0 μs tf Fall time IC=10IB1=-10IB2=2A VCC=30V PW=30μs 1.1 μs hFE Classifications O Y GR 60-120 100-200 150-300 2 |
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