| Motore di ricerca datesheet componenti elettronici |
|
2SD898 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
2SD898 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
|
2 / 3 page ![]() Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD898 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=200mA; IC=0; 6 V VCEsat Collector-emitter saturation voltage IC=2.5A;IB=0.8 A 5.0 V VBEsat Base-emitter saturation voltage IC=2.5A;IB=0.8 A 1.5 V ICES Collector cut-off current VCE=1500V;RBE=0 0.5 mA IEBO Emitter cut-off current VEB=6V;IC=0 50 200 mA hFE DC current gain IC=0.5A ; VCE=5V 10 40 VF Diode forward voltage IF=3A 2.2 V 2 |
|
|
Link URL |
| Lei ha avuto il aiuto da alldatasheet? [ DONATE ] |
Di alldatasheet | Richest di pubblicita | contatti | Privacy Policy | Collegamento alla scheda tecnica | scambio Link | Ricerca produttore All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |