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2SD1238L Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1238L Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 4 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1238L CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=1mA ;RBE=∞ 80 V V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 90 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 6 V VCEsat Collector-emitter saturation voltage IC=6A; IB=0.6A 0.4 V ICBO Collector cut-off current VCB=80V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=4V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=2V 70 280 hFE-2 DC current gain IC=6A ; VCE=2V 30 fT Transition frequency IC=1A ; VCE=5V 20 MHz Switching times ton Turn-on time 0.2 μs ts Storage time 1.7 μs tf Fall time IC=5A;IB1=-IB2=-0.5A VCC=50V;RL=10Ω 0.2 μs hFE-1 Classifications Q R S 70-140 100-200 140-280 |
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