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2SD1376 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1376 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1376 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA; RBE=∞ 120 V V(BR)EBO Emitter-base breakdown voltage IE=50mA ;IC=0 7 V VCEsat-1 Collector-emitter saturation voltage IC=1.0A ;IB=1mA 1.5 V VCEsat-2 Collector-emitter saturation voltage IC=1.5A ;IB=1.5mA 2.0 V VBEsat-1 Base-emitter saturation voltage IC=1.0A ;IB=1mA 2.0 V VBEsat-2 Base-emitter saturation voltage IC=1.5A ;IB=1.5mA 2.5 V ICEO Collector cut-off current VCE=100V; RBE=∞ 10 μA ICBO Collector cut-off current VCB=120V; IE=0 100 μA hFE DC current gain IC=1A ; VCE=3V 2000 30000 VD Diode forward voltage ID=1.5A 3.0 V ton Turn-on time 0.5 μs toff Turn-off time IC=1A ;IB1=-IB2=1mA 2.0 μs |
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