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2SD1545 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1545 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() INCHANGE Semiconductor Product Specification 2 Silicon NPN Power Transistor 2SD1545 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 4.0A; IB= 0.8A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4.0A; IB= 0.8A 1.5 V ICBO Collector Cutoff Current VCB= 500V ; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V ; IC= 0 1.0 mA hFE DC Current Gain IC= 1A ; VCE= 5V 8 fT Current-Gain—Bandwidth Product IC= 0.1A ; VCE= 10V 3 MHz COB Output Capacitance IE= 0 ; VCB= 10V;ftest= 1.0MHz 165 pF tf Fall Time ICP= 4A , IB1(end)= 0.8A 0.5 1.0 μs |
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