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2SD288 Scheda tecnica(PDF) 2 Page - Savantic, Inc. |
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2SD288 Scheda tecnica(HTML) 2 Page - Savantic, Inc. |
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2 / 4 page ![]() SavantIC Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD288 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 55 V V(BR)CBO Collector-base breakdown voltage IC=0.5mA; IE=0 80 V V(BR)EBO Emitter-base breakdown votage IE=0.5mA; IC=0 5 V VCEsat Collector-emitter saturation voltage IC=1 A;IB=0.1 A 1.0 V ICBO Collector cut-off current VCB=50V; IE=0 50 µA IEBO Emitter cut-off current VEB=5V; IC=0 50 µA hFE DC current gain IC=0.5A ; VCE=5V 40 240 hFE classifications R O Y 40-80 70-140 120-240 |
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