TIP112

DISCRETE SEMICONDUCTORS

R

DC COMPONENTS CO., LTD.

TECHNICAL SPECIFICATIONS OF NPN DARLINGTON TRANSISTOR

Description

Designed for use in general purpose amplifier and

low-speed switching applications.

Pinning

1 = Base

2 = Collector

3 = Emitter

TO-220AB

Dimensions in inches and (millimeters)

.625(15.87)

.570(14.48)

.562(14.27)

.500(12.70)

.055(1.39)

.045(1.15)

.185(4.70)

.173(4.40)

.405(10.28)

.380(9.66)

.295(7.49)

.220(5.58)

.350(8.90)

.330(8.38)

.640

(16.25)

Typ

.055(1.40)

.045(1.14)

.037(0.95)

.030(0.75)

.100

(2.54)

Typ

.024(0.60)

.014(0.35)

Φ.151

Φ(3.83)

Typ

1 2 3

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Collector-Base Breakdown Volatge

100

-

-

V

Collector-Emitter Breakdown Voltage

100

-

-

V

Collector Cutoff Current

-

-

1

mA

-

-

2

mA

Emitter Cutoff Current

-

-

2

mA

-

-

2.5

V

-

-

2.8

V

1K

-

-

-

500

-

-

-

Output Capacitance

-

-

200

pF

Electrical Characteristics

(1)Pulse Test: Pulse Width

380

µs, Duty Cycle 2%

Characteristic

Symbol

Rating

Unit

Collector-Base Voltage

100

V

Collector-Emitter Voltage

100

V

Emitter-Base Voltage

5

V

Collector Current (continuous)

4

A

Collector Current (peak)

6

A

50

W

Total Power Dissipation

2

W

Junction Temperature

+150

o

C

Storage Temperature

-55 to +150

o

C