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BAV19-TAP Scheda tecnica(PDF) 3 Page - Vishay Siliconix |
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BAV19-TAP Scheda tecnica(HTML) 3 Page - Vishay Siliconix |
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3 / 5 page ![]() BAV17/18/19/20/21 Document Number 85543 Rev. 1.7, 19-Feb-07 Vishay Semiconductors www.vishay.com 3 Typical Characteristics Tamb = 25 °C unless otherwise specified Package Dimensions in millimeters (inches): DO35 Figure 1. Reverse Current vs. Junction Temperature Figure 2. Forward Current vs. Forward Voltage 040 80 120 160 0.01 0.1 1 10 1000 Tj -Junction Temperature (°C) 200 94 9084 100 Scattering Limit V R = VRRM 0 0.4 0.8 1.2 1.6 0.1 1 10 100 1000 VF - Forward Voltage (V) 2.0 94 9085 Scattering Limit T j = 25 °C Figure 3. Differential Forward Resistance vs. Forward Current 0.1 1 10 1 10 100 1000 IF - Forward Current (mA) 100 94 9089 T j = 25 °C 94 9366 26 min. (1.024) 3.9 max. (0.154) 26 min. (1.024) Cathode Identification Rev. 6 - Date: 29. January 2007 Document no.: 6.560-5004.02-4 |
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