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SSL6679 Scheda tecnica(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

Il numero della parte SSL6679
Spiegazioni elettronici  P-Channel Enhancement Mode Power Mos.FET
PDF  4 Pages
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Produttore elettronici  SECOS [SeCoS Halbleitertechnologie GmbH]
Homepage  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SSL6679 Scheda tecnica(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 4
Notes: 1.
2.Pulse width 300us, dutycycle 2%.
≦
≦
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
740
f=1.0MHz
34
S
VDS=-10V, ID=-24A
_
_
_
_
Crss
Gfs
Reverse Transfer Capacitance
Forward Transconductance
42
6
25
11
35
58
78
2870
960
nC
nS
pF
VGS=0V
VDS=-25V
VDD=-15V
ID=-16A
VGS=-10V
RG=3.3
RD=0.94
Ω
Ω
ID=-16A
VDS=-24V
VGS=-4.5V
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
_
9
mΩ
VGS=-10V, ID=- 30A
4590
_
67
Qg
Qgs
Qgd
Td(ON)
Td(Off)
Tr
Ciss
Coss
Tf
RDS(ON)
30
0.03
.0
-3.0
100
-1
-25
±
V
V/
Reference to 25C, ID=-1mA
o
oC
V
nA
uA
uA
VGS=0V, ID=-250uA
VGS= 25V
±
VDS=-30V,VGS=0
VDS=-24V,VGS=0
VDS=VGS, ID=-250uA
_
_
_
_
_
_
_
_
_
_
-
-
-1
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
BVDSS
BVDS/ Tj
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Gate-Source Leakage Current
Drain-Source Leakage Current (Tj=25 )
Static Drain-Source On-Resistance
Drain-Source Leakage Current(Tj=150 )
VGS(th)
IGSS
oC
oC
2
2
2
Parameter
Symbol
Max.
Typ.
Test Condition
Min.
Unit
_
_
_
15
VGS=-4.5 V, ID=- 24A
_
Electrical Characteristics( Tj=25 C Unless otherwise specified)
o
Unit
Forward On Voltage
Reverse Recovery Time
Trr
_
47
43
6
=-1
S
A,VGS=0V.
I
nC
nS
_
_
dl/dt=100A/us
24
-
S
=
A,VGS=0V.
Reverse Recovery Change
_
Qrr
I
VSD
_
_
V
-1.2
2
Source-Drain Diode
Pulse width limited by safe operating area.
2
Elektronische Bauelemente
SSL6679
-75A, -30V,RDS(ON) 9m
P-Channel Enhancement Mode Power Mos.FET
Ω



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