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STT2604 Scheda tecnica(PDF) 3 Page - SeCoS Halbleitertechnologie GmbH |
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STT2604 Scheda tecnica(HTML) 3 Page - SeCoS Halbleitertechnologie GmbH |
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3 / 4 page ![]() Elektronische Bauelemente STT2604 5.5 A, 30V,RDS(ON) 45m N-Channel Enhancement Mode Power Mos.FET Ω 01-Jun-2002 Rev. A Page 3 of 4 http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Characteristics Curve Fig 5. Forward Characteristics of Reverse Diode Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature Fig 6. Gate Threshold Voltage v.s. Junction Temperature |
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