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7P20-TN3-R Scheda tecnica(PDF) 3 Page - Unisonic Technologies |
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7P20-TN3-R Scheda tecnica(HTML) 3 Page - Unisonic Technologies |
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3 / 6 page ![]() 7P20 Preliminary Power MOSFET UNISONICTECHNOLOGIESCO.,LTD 3 of 6 www.unisonic.com.tw QW-R502-288.a ELECTRICAL CHARACTERISTICS (Cont.) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS Diode Forward Voltage VSD IS=-5.7A, VGS=0V -5.0 V Maximum Body-Diode Continuous Current IS -5.7 A Maximum Pulsed Drain-Source Diode Forward Current ISM -22.8 A Body Diode Reverse Recovery Time tRR 180 ns Body Diode Reverse Recovery Charge QRR VGS=0V, IS=-7.30 A dIF/dt=100A/s (Note 1) 1.07 µC Note: 1. Pulse Test : Pulse width≦300μs, Duty cycle≦2% Note: 2. Essentially independent of operating temperature |
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