BCP53T1

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Characteristics

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage (IC = –100 µAdc, IE = 0)

V(BR)CBO

–100

—

—

Vdc

Collector-Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0)

V(BR)CEO

– 80

—

—

Vdc

Collector-Emitter Breakdown Voltage (IC = –100 µAdc, RBE = 1.0 kohm)

V(BR)CER

–100

—

—

Vdc

Emitter-Base Breakdown Voltage (IE = –10 µAdc, IC = 0)

V(BR)EBO

– 5.0

—

—

Vdc

Collector-Base Cutoff Current (VCB = – 30 Vdc, IE = 0)

ICBO

—

—

–100

nAdc

Emitter-Base Cutoff Current (VEB = – 5.0 Vdc, IC = 0)

IEBO

—

—

–10

µAdc

ON CHARACTERISTICS

DC Current Gain

(IC = – 5.0 mAdc, VCE = – 2.0 Vdc)

(IC = –150 mAdc, VCE = – 2.0 Vdc)

(IC = – 500 mAdc, VCE = – 2.0 Vdc)

hFE

25

40

25

—

—

—

—

250

—

—

Collector-Emitter Saturation Voltage (IC = – 500 mAdc, IB = – 50 mAdc)

VCE(sat)

—

—

– 0.5

Vdc

Base-Emitter On Voltage (IC = – 500 mAdc, VCE = – 2.0 Vdc)

VBE(on)

—

—

–1.0

Vdc

DYNAMIC CHARACTERISTICS

Current-Gain — Bandwidth Product

(IC = –10 mAdc, VCE = – 5.0 Vdc, f = 35 MHz)

fT

—

50

—

MHz

TYPICAL ELECTRICAL CHARACTERISTICS

500

200

100

50

20

1

3

5

10

30

50

100

300 500

1000

IC, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (mA)

Figure 2. Current Gain Bandwidth Product

1000

1

10

100

500

300

100

20

50

IC, COLLECTOR CURRENT (mA)

Figure 3. Saturation and “ON” Voltages

1000

1

1

0.8

0.6

0.4

0

0.2

100

10

120

110

100

90

80

70

60

50

40

30

20

10

0

20

18

16

14

12

10

8

6

4

2

0

V, VOLTAGE (VOLTS)

Figure 4. Capacitances

VCE = 2 V

VCE = 2 V

V(BE)sat @ IC/IB = 10

V(BE)on @ VCE = 2 V

V(CE)sat @ IC/IB = 10

Cib

Cob