Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786

5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

e3 100% Sn Plated

TO-220 (K) Package Outline

Dimensions in Inches and (Millimeters)

Source

Gate

Drain

Drain

1ms

100ms

Rds(on)

0.5

SINGLE PULSE

0.1

0.3

0.7

0.05

D = 0.9

Scaling for Different Case & Junction

Temperatures:

I

D

D(T

C

= 25

Peak TJ = PDM x ZθJC + TC

Duty Factor D =

2

t2

t1

Note:

DC line

100µs

I

DM

10ms

13µs

100µs

I

DM

100ms

10ms

13µs

Rds(on)

DC line

T

J

T

C

1ms

T

J

T

C

V

DS

, DRAIN-TO-SOURCE VOLTAGE (V)

V

DS

, DRAIN-TO-SOURCE VOLTAGE (V)

Figure 9, Forward Safe Operating Area

Figure 10, Maximum Forward Safe Operating Area

1.0

RECTANGULAR PULSE DURATION (seconds)

Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration

1

10

100

1000

1

10

100

1000

50

10

1

0.1

50

10

1

0.1

0.60

0.50

0.40

0.30

0.20

0.10

0

APT7F80K