APTGF50TL60T3G

www.microsemi.com

8- 8

CR1 to CR6 Typical performance curve

Forward Characteristic of diode

0

20

40

60

80

0.0

0.4

0.8

1.2

1.6

2.0

2.4

Energy losses vs Collector Current

0

0.25

0.5

0.75

1

0

2040

6080

0

0.25

0.5

0.75

1

02

46

8

10

Gate Resistance (ohms)

Switching Energy Losses vs Gate Resistance

Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration

0.9

0.7

0.5

0.3

0.1

0.05

Single Pulse

0

0.2

0.4

0.6

0.8

1

1.2

1.4

0.00001

0.0001

0.001

0.01

0.1

1

10

Rectangular Pulse Duration (Seconds)

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Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103

5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262

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