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2SD2549 Scheda tecnica(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD2549 Scheda tecnica(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD2549 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 80 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.375A B 0.7 V VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 4V 1.8 V ICES Collector Cutoff Current VCE= 70V; VBE= 0 100 μA ICEO Collector Cutoff Current VCE= 70V; IB= 0 B 100 μA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 1.0 mA hFE-1 DC Current Gain IC= 1A; VCE= 4V 70 250 hFE-2 DC Current Gain IC= 3A; VCE= 4V 10 fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 10V 30 MHz Switching Times ton Turn-on Time 0.5 μs tstg Storage Time 4.5 μs tf Fall Time IC= 1A; IB1= -IB2= 0.1A; VCC= 50V 0.5 μs hFE-1 Classifications Q P 70-150 120-250 isc Website:www.iscsemi.cn 2 www.iscsemi.cn |
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