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MA4SW410 Scheda tecnica(PDF) 1 Page - M/A-COM Technology Solutions, Inc. |
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MA4SW410 Scheda tecnica(HTML) 1 Page - M/A-COM Technology Solutions, Inc. |
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1 / 7 page ![]() • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. V6 MA4SW410 ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop- ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed. HMIC™ Silicon SP4T PIN Diode Switch RoHS Compliant Max. operating conditions for a combination of RF power, D.C. bias and temperature: +30dBm CW @ 15mA (per diode) @+85°C Absolute Maximum Ratings TAMB = +25°C ( Unless Otherwise Specified ) Parameter Value Operating Temperature -65°C to +125°C Storage Temperature -65°C to +150°C RF C.W. Incident Power +30dBm Forward Bias Current per Port ± 50mA Reverse Applied Voltage -25 Volts Features ♦ Broad Bandwidth ♦ Specified from 50 MHz to 20 GHz ♦ Usable from 50 MHz to 26.5 GHz ♦ Lower Insertion Loss and Higher Isolation than Comparable pHEMT or Discrete Component Designs ♦ Rugged Fully Monolithic ♦ Glass Encapsulated Chip with Polymer Protective Coating ♦ Up to +30dBm C.W. Power Handling @ +25°C ♦ 50 nS Switching Speed Description The MA4SW410 is a SP4T, series-shunt, broadband, PIN diode switch made with M/A-COM’s Tech’s patented HMICTM (Heterolithic Microwave Integrated Circuit) process. This process allows the silicon pedestals which form the series - shunt diodes and vias to be embedded into low loss, low dispersion glass. By also incorporating small spacing between circuit elements, the result` is an HMIC chip with low insertion loss and high isolation at frequencies up to 26.5GHz. It is designed to be used as a moderate power, high performance switch and provide superior performance when compared to similar designs that use discrete components. The top side of the chip is protected by a polymer coating for manual or automatic handling and large gold bond pads help facilitate connection of low inductance ribbons. The gold metallization on the backside of the chip allows for attachment via 80/20, gold/tin solder or conductive silver epoxy. Applications The MA4SW410 is a high performance switch suitable for use in multi-band ECM, radar, and instrumentation control circuits where high isolation to insertion loss ratios are required. With a standard ±5V, TTL controlled, PIN diode driver, 50nS switching speeds are achievable. |
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