SA60U

3

P r o d u c t I n n o v a t i o n F r o m

SA60

NOTES:

1. (AllMin/MaxcharacteristicsandspecificationsareguaranteedovertheSpecifiedOperatingCondi-

tions.Typicalperformancecharacteristicsandspecificationsarederivedfrommeasurementstaken

2. Longtermoperationatthemaximumjunctiontemperaturewillresultinreducedproductlife.Derate

powerdissipationtoachievehighMTTF.

3. Eachofthetwoactiveoutputtransistorscandissipate78W.

Parameter

Min

Typ

Max

Units

ThERMAL(Note3)

RESISTANCE,junctiontocase

Fulltemperaturerange,

foreachtransistor

1.6

°C/W

RESISTANCE,junctiontoair

Fulltemperaturerange

30

°C/W

TEMPERATURERANGE,case

-25

+85

°C

10

100

1000

10

100

1000

PWM FREQ VS EXT INT CAP

0

12

15

0

5

20

25

30

35

TOTAL VOLTAGE DROP

10

15

3

6

9

EXTERNAL INTEGRATION CAP, C (pF)

OUTPUT CURRENT, A

Vs QUIESCENT VS VOLTAGE

0.4

1.8

1.6

1.4

1.2

0.8

0.6

1

Vs, (V)

SWITCHING FREQUENCY, Fsw (KHz)

10

70

20

30

40 50

60

0

50

100

150

200

250

9

16

10

11

12

13

14

15

0.6

0.8

1.4

SOURCE TO DRAIN VOLTAGE

0.1

REVERSE DIODES

10

1

Vs QUIESCENT VS SWITCH FREQ

POWER DERATING

0

20

80

60

40

1.2

1.8

1.6

1

40

60

80

100

120

140

160

75

CASE TEMPERATURE, T

100

0

25

50

125

Vcc VOLTAGE (V)

0.7

0.8

0.9

1

1.2

1.1

1.4

1.3

Vcc QUIESCENT VS VOLTAGE

1/6

5/6

ANALOG INPUT AS PROPORTION OF Vcc

0

DUTY CYCLE VS ANALOG INPUT

80

100

1/3

20

40

60

1/2

2/3

Cf (pF) = (1.44E7/Fsw)–50

Vcc I

SWITCHING FREQUENCY, Fsw (KHz)

1.6

1.5

1.4

1.3

1.2

1.1

1

25

50

75

100

125

A OUT

B OUT

T

T

T

T

0.9

0.8

0.6

0.2

80

25°C

85°C

EACH OUTPUT

TRANSISTOR

20

0