CPC1718 datasheet(3/6 Pages) CLARE

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CPC1718

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R02

*The Performance data shown in the graphs above is typical of device performance. For guaranteed parameters not indicated in the written speciﬁcations, please

contact our application department.

Parameter

Conditions

Symbol

Min

Typ

Max

Units

Thermal Resistance (junction to case)

RθJC

0.3

°C/W

Thermal Resistance (junction to ambient)

Free air

RθJA

°C/W

Junction Temperature (operation)

-40

100

°C

Thermal Characteristics

Thermal Management

Device high current characterization was performed using Kunze heat sink KU 1-159, phase change thermal

interface material KU-ALC 5, and transistor clip KU 4-499/1. This combination provided an approximate

junction-to-ambient thermal resistance of 12.5°C/W.

Heat Sink Calculation

Higher load currents are possible by using lower thermal resistance heat sink combinations.

J = Junction Temperature (°C), TJ ≤ 100°C *

A = Ambient Temperature (°C)

L(99) = Load Current with Case Temperature @ 99°C (ADC)

L = Desired Operating Load Current (ADC), IL ≤ IL(MAX)

θJC = Thermal Resistance, Junction to Case (°C/W) = 0.3°C/W

θCA = Thermal Resistance of Heat Sink & Thermal Interface Material , Case to Ambient (°C/W)

D(99) = Maximum power dissipation with case temperature held at 99ºC = 3.33W

* Elevated junction temperature reduces semiconductor lifetime.

Heat Sink Rating

θCA =

- R

θJC

J - TA) IL(99)

•

D(99)

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