EM68932DVKB datasheet(35/40 Pages) ETRON

35 / 40 page

EtronTech

EM68932DVKB

Etron Confidential

Rev. 1.0

Aug. 2009

Figure 27. Random Write Cycles

WRITE

BA, Col b

BA, Col x

BA, Col n

BA, Col a

BA, Col g

DQS

DI b

DI x

tDQSS max

DI a

Command

Address

DI n

Don’t Care

(1) DI b etc. = Data In to column b, etc. ;

b’, etc. = the next Data In following DI b, etc. according to the programmed burst order

(2) Programmed burst length = 2, 4, or 8 in cases shown. If burst of 4 or 8 , burst would be truncated.

(3) Each WRITE command may be to any active bank and may be to the same or different devices.

Figure 28. Non-Interrupting Write to Read

Don’t Care

WRITE

NOP

READ

NOP

BA, Col b

BA, Col n

DQS

(1) DI b = Data In to column b.

3 subsequent elements of Data In are applied in the programmed order following DI b.

(2) A non-interrupted burst of 4 is shown.

(3) tWTR is referenced from the positive clock edge after the last Data In pair.

(4) A10 is LOW with the WRITE command (Auto Precharge is disabled)

(5) The READ and WRITE commands are to the same device but not necessarily to the same bank.

DI b

tDQSS max

Command

Address

tWTR

NOP

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