HAT2202C datasheet(4/7 Pages) RENESAS

Il numero della parte	HAT2202C

Spiegazioni elettronici	Silicon N Channel MOS FET Power Switching

PDF	7 Pages

Scroll/Zoom	100%

Produttore elettronici	RENESAS [Renesas Technology Corp]

Homepage	http://www.renesas.com

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4 / 7 page

HAT2202C

REJ03G1236-0600 Rev.6.00 Oct 01, 2009

Page 4 of 6

Case Temperature

(°C)

Static Drain to Source on State Resistance

vs. Temperature

Drain Current ID (A)

Forward Transfer Admittance vs.

Drain Current

Drain to Source Voltage VDS (V)

Typical Capacitance vs.

Drain to Source Voltage

Gate Charge Qg (nc)

Dynamic Input Characteristics

Drain Current ID (A)

Switching Characteristics

Source to Drain Voltage VSD (V)

Reverse Drain Current vs.

Source to Drain Voltage

–25

100 125 150

0.3

0.1

100

0.3

0.1

°C

VGS = 2.5 V

1, 1.5 ,3 A

1000

100

300

100

0.1

0.3

100

Ciss

Coss

ID = 3 A

VDD

VGS

515

0.4

0.8

1.2

1.6

2.0

VGS = 0 V

3 A

ID = 1, 1.5 A

4.5 V

5 V

Crss

VGS = 4.5 V, VDD = 10 V

Rg = 4.7

Ω, duty ≤ 1 %

Tc = –25

°C

Pulse Test

VDS = 10 V

Pulse Test

VGS = 0

f = 1 MHz

VDD = 5 V

10 V

20 V

VDD = 20 V

10 V

5 V

td(off)

td(on)

Pulse Test

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