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Motore di ricerca datesheet componenti elettronici |
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Motore di ricerca datesheet componenti elettronici |
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CDBQR0230L Scheda tecnica(PDF) 1 Page - Comchip Technology |
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CDBQR0230L Scheda tecnica(HTML) 1 Page - Comchip Technology |
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1 / 4 page  Io = 200 mA VR = 30 Volts CDBQR0230L SMD Schottky Barrier Diode (RoHS Device) Page 1 QW-A1118 REV:C SMD Diodes Specialist Comchip Technology CO., LTD. uA V 30 0.5 IR VF Reverse current Forward voltage Parameter Conditions Symbol Min Typ Max Unit VR = 10 V IF = 200 mA O Maximum Rating (at TA=25 C unless otherwise noted) O Electrical Characteristics (at TA=25 C unless otherwise noted) Features Low forward voltage. Designed for mounting on small surface. Extremely thin / leadless package. Majority carrier conduction. Mechanical data Case: 0402(1005) standard package, molded plastic. Terminals: Gold plated, solderable per MIL-STD-750,method 2026. Marking code: cathode band & BA Mounting position: Any. Weight: 0.001 gram(approx.). A mA V V 1 200 30 35 IO VR VRRM IFSM 8.3ms single half sine-wave superimposed on rate load(JEDEC method) OC OC +125 +125 -40 TSTG Tj Storage temperature Junction temperature Average forward current Reverse voltage Repetitive peak reverse voltage Forward current,surge peak Parameter Conditions Symbol Min Typ Max Unit mW 125 PD Power Dissipation 0.041(1.05) 0.037(0.95) 0.026(0.65) 0.022(0.55) 0402(1005) Dimensions in inches and (millimeter) 0.020(0.50) Typ. 0.022(0.55) 0.018(0.45) 0.012(0.30) Typ. |
Codice articolo simile - CDBQR0230L |
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Descrizione simile - CDBQR0230L |
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