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SS12T3 Scheda tecnica(PDF) 2 Page - ON Semiconductor

Il numero della parte SS12T3
Spiegazioni elettronici  12 V, 1 A, Low VCE(sat) PNP Transistor
PDF  5 Pages
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Produttore elettronici  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

SS12T3 Scheda tecnica(HTML) 2 Page - ON Semiconductor

  SS12T3 Datasheet HTML 1Page - ON Semiconductor SS12T3 Datasheet HTML 2Page - ON Semiconductor SS12T3 Datasheet HTML 3Page - ON Semiconductor SS12T3 Datasheet HTML 4Page - ON Semiconductor SS12T3 Datasheet HTML 5Page - ON Semiconductor  
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NSS12100M3T5G
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2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation
TA = 25°C
Derate above 25
°C
PD (Note 1)
460
3.7
mW
mW/
°C
Thermal Resistance,
Junction-to-Ambient
RqJA (Note 1)
270
°C/W
Total Device Dissipation
TA = 25°C
Derate above 25
°C
PD (Note 2)
625
5.0
mW
mW/
°C
Thermal Resistance,
Junction-to-Ambient
RqJA (Note 2)
200
°C/W
Thermal Resistance,
Junction-to-Lead 3
RqJL
105
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage, (IC = -10 mAdc, IB = 0)
V(BR)CEO
-12
-
-
Vdc
Collector-Base Breakdown Voltage, (IC = -0.1 mAdc, IE = 0)
V(BR)CBO
-12
-
-
Vdc
Emitter-Base Breakdown Voltage, (IE = -0.1 mAdc, IC = 0)
V(BR)EBO
-5.0
-
-
Vdc
Collector Cutoff Current, (VCB = -12 Vdc, IE = 0)
ICBO
-
-0.01
-0.1
mAdc
Emitter Cutoff Current, (VCES = -5.0 Vdc, IE = 0)
IEBO
-
-0.01
-0.1
mAdc
ON CHARACTERISTICS
DC Current Gain (Note 3)
(IC = -10 mA, VCE = -2.0 V)
(IC = -500 mA, VCE = -2.0 V)
(IC = -1.0 A, VCE = -2.0 V)
hFE
200
120
80
-
-
-
-
-
-
Collector-Emitter Saturation Voltage (Note 3)
(IC = -0.05 A, IB = -0.005 A) (Note 4)
(IC = -0.1 A, IB = -0.002 A)
(IC = -0.1 A, IB = -0.010 A)
(IC = -0.5 A, IB = -0.050 A)
(IC = -1.0 A, IB = -0.100 A)
VCE(sat)
-
-
-
-
-
-0.030
-0.060
-0.040
-0.155
-0.350
-0.035
-0.080
-0.060
-0.220
-0.410
V
Base-Emitter Saturation Voltage (Note 3)
(IC = -1.0 A, IB = -0.01 A)
VBE(sat)
-
0.95
-1.15
V
Base-Emitter Turn-on Voltage (Note 3)
(IC = -2.0 A, VCE = -2.0 V)
VBE(on)
-
-1.05
-1.15
V
SMALL-SIGNAL CHARACTERISTICS
Input Capacitance (VEB = -0.5 V, f = 1.0 MHz)
Cibo
-
40
50
pF
Output Capacitance (VCB = -3.0 V, f = 1.0 MHz)
Cobo
-
15
20
pF
Noise Figure (IC = 0.2 mA, VCE = 5.0 V, RS = 1.0 kW, f = 1.0 MHz, BW = 200 Hz)
NF
-
-
5.0
dB
1. FR-4 @ 100 mm2, 1 oz copper traces.
2. FR-4 @ 500 mm2, 1 oz copper traces.
3. Pulsed Condition: Pulse Width = 300
msec, Duty Cycle ≤ 2%.
4. Guaranteed by design but not tested.



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