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BU911 Scheda tecnica(PDF) 2 Page - Comset Semiconductor |
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BU911 Scheda tecnica(HTML) 2 Page - Comset Semiconductor |
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2 / 2 page ![]() COMSET SEMICONDUCTORS 2/2 NPN BU911 Symbol Ratings Test Condition(s) Min Typ Mx Unit VF Didode forward Voltage IF=4 A -- 2.5 V IC=2.5 A, IB=50 mA -- 1.8 VCE(SAT) Collector-Emitter saturation Voltage (1) IC=4 A, IB=200 mA -- 1.8 V IC=2.5 A, IB=50 mA -- 2.2 VBE(SAT) Base-Emitter saturation Voltage (1) IC=4 A, IB=200 mA -- 2.5 V (1) Pulse conditions : tp < 300 µs, duty cycle =1.5% NPN BU911 MECHANICAL DATA CASE TO-220 DIMENSIONS mm inches A 9,86 0,39 B 15,73 0,62 C 13,37 0,52 D 6,67 0,26 E 4,44 0,17 F 4,21 0,16 G 2,99 0,11 H 17,21 0,68 L 1,29 0,05 M 3,6 0,14 N 1,36 0,05 P 0,46 0,02 R 2,1 0,08 S 5 0,19 T 2,52 0,098 U 0,79 0,03 Pin 1 : base Pin 2 : Collector Pin 3 : emitter Information furnished is believed to be accurate and reliable. However, CS assumes no responsability for the consequences of use of such information nor for errors that could appear. Data are subject to change without notice. |
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