BUX41 datasheet(2/3 Pages) COMSET

2 / 3 page

NPN BUX41

COMSET SEMICONDUCTORS

2/3

ELECTRICAL CHARACTERISTICS

TC=25°C unless otherwise noted

Symbol

Ratings

Test Condition(s)

Min Typ Mx

Unit

VCEO(SUS)

Collector-Emitter Sustaining

Voltage (1)

IC=200 mA

200

VEB0

Emitter-Base Voltage

IC=0A , IE=50 mA

ICEO

Collector Cutoff Current

VCE=160 V , IB=0A

VCE= VCEX , VBE= -1.5V

ICEX

Collector Cutoff Current

VCE= VCEX , VBE= -1.5V, Tcase = 125°C

IEBO

Emitter Cutoff Current

VEB=5.0 V, IC=0

IC=5 A , VCE=4.0 V

hFE

DC Current Gain (1)

IC=8 A , VCE=4.0 V

IC=5 A , IB=0.5 A

0.38

1.2

VCE(SAT)

Collector-Emitter saturation

Voltage (1)

IC=8 A , IB=1 A

0.6

1.6

VBE(SAT)

Base-Emitter saturation

Voltage (1)

IC=8 A , IB=1 A

1.35

VCE=30 V , ts = 1s

IS/B

Second breakdown collector

current

VCE=135 V , ts = 1s

0.15

ES/B

Clamped ES/B Collector

current

Vclamp=200 V , L=500 µH

Transition frequency

VCE=15 V , IC=1 A , f=10 MHz

MHz

ton

Turn-on time

IC=8 A , IB=1 A , VCC=150 V

0.28

1.0

Storage time

1.2

1.7

File time

IC=8 A , VCC=150 V

IB1 = -IB2 =1 A

0.25

0.8

µs

(1) Pulse Duration = 300

µs, Duty Cycle <= 2%

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