TGF4250 datasheet(5/7 Pages) TRIQUINT

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TGF4250-EEU

RF AND DC

CHARACTERISTICS

LINEAR MODEL

PARAMETER

MIN

NOMINAL

MAX

UNIT

Pout

Output Power

dBm

Power Gain

8.5

P A E

Power Added Efficiency

IDSS

Drain Saturation Current

816

1176

1536

Transconductance

576

792

1008

Pinch Off Voltage

-2.7

-1.85

-1

BVGS

Breakdown Voltage Gate-Source

-30

- 22

-17

BVGD

Breakdown Voltage Gate-Drain

-30

- 22

-17

Pout, Gain, and P AE: Measured at 8.5- GHz, drain voltage of 8.0 V . Gate voltage is adjusted to achieve

quiescent current of approximately 20% I

DSS with no RF signal applied. The source is grounded. Input power

between 25 and 26- dBm.

DSS: Saturated drain- source current. Sear ch for the maximum IDS at VGS = 0.0 V, and VDS swept between 0.5 V

to 3.5 V. Note that the drain voltage at which I

DSS is located and r ecor ded as V

DSP.

M: Transconductance. (I DSS - I DS1)/ I VG1 I.

DS1 measur ed at VG1 = - 0.25 V using the knee sear ch technique;

DS swept between 0.5 V and VDSP to search for maximum IDS1.

P: Pinch off voltage. VGS for I DS = 0.5 mA/mm of gate width. VDS fixed at 2.0 V, VGS swept to bring I DS to

0.5 mA/mm. Sweep will stop if V

P cur rent not found beyond 0.5 V of the minimum VP specification.

GS: Breakdown voltage, gate to source. I BD = 1.0 mA/mm of gate width. Source fixed at ground, drain not

connected (floating). When 1.0mA/mm drawn at gate, V

GS measur ed as BVGS.

GD:

Breakdown voltage, gate to drain. I

BD = 1.0 mA/mm of gate width. Drain fixed at ground, source not

connected (floating). When 1.0 mA/mm drawn at the gate, V

GD measur ed as BVGD.

CCS

FET Elements

G = 0.010525 nH

G = 0.21075

GS = 20425

I = 0.3025

GS = 4.84 pF

DG = 0.4015 pF

DG = 51000

S = 0.1

S = 0.011 nH

DS = 24.5025

DS = 1.013 pF

D = 0.165

D = 0.0055 nH

VCCS Parameters

M = 531.6 mS

A = 0

R1 = 1E19

R2 = 1E19

F = 0

T = 5.49 pS

DS = 8.0 V and 30% I DSS at T = 25°C

TriQuint Semiconductor, Inc.

•

Texas Facilities

• (972) 995-8465

• www.triquint.com

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