CHA2093RBF

Ref. : DSCHA2093RBF2057 -26-Feb.-02-

1/8

Specifications subject to change without notice

United Monolithic Semiconductors S.A.S.

Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France

Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09

20-30GHz Low Noise Amplifier

GaAs Monolithic Microwave IC in SMD leadless package

Description

The monolithic microwave IC (MMIC) in the

package

is

a

two-stage

wide

band

monolithic low noise amplifier.

The circuit is manufactured with a standard

PHEMT process : 0.25µm gate length, via

holes through the substrate, air bridges

and electron beam gate lithography.

It is supplied in a new SMD leadless chip

carrier.

Main Features

■ Broad band performance: 20-30GHz

■ Gain = 14dB (typical)

■ Noise Figure 3.0dB (typical)

■ Return loss < -7dB

■ Low DC consumption < 50mA

■ SMD leadless package

■ Dimensions: 5.08 x 5.08 x 0.97 mm

3

SMD Package Dimensions

"Please note that PIN 1 is located in the lower left corner of the package (front-side view) for all SMD-type packages from United Monolithic Semiconductors. It is indicated

by a triangle on the package lid. Starting with PIN 1 the other pads are numbered counter-clockwise (front-side view). ATTENTION: The dot on the backside of the

package (i.e. side with metallic pads) is just for fabrication purposes and does NOT indicate the location of PIN 1."