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CHR2291 Scheda tecnica(PDF) 2 Page - United Monolithic Semiconductors |
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CHR2291 Scheda tecnica(HTML) 2 Page - United Monolithic Semiconductors |
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2 / 6 page ![]() 12-17GHz Integrated Down Converter CHR2291 Ref. : DSCHR22912218 06-Aug.-02 2/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Electrical Characteristics for Broadband Operation Tamb = +25°C, Vd = 3.5V ,Idl=50mA, Idm=50mA Symbol Parameter Min Typ Max Unit FRF RF frequency range 12 17 GHz FLO LO frequency range 5.25 7.75 GHz FIF IF frequency range 0.25 1.5 GHz Gc Conversion gain (1) +10 dB NF Noise Figure (1) 3.5 dB PLO LO Input power +10 dBm Img Sup Image Suppression 15 dBc P1dB Input power at 1dB gain compression -8 dBm LO VSWR Input LO VSWR (1) 2.0:1 RF VSWR Input RF VSWR (1) 2.0:1 Id Bias current (2) 100 mA (1) On Wafer measurements (2) Current source biasing network is recommended. Optimum performances for Idm= 50mA and Idl= 50mA Absolute Maximum Ratings Tamb. = 25°C (1) Symbol Parameter Values Unit Vd Maximum drain bias voltage 4.0 V Id Maximum drain bias current 180 mA Vg Gate bias voltage -2.0 to +0.4 V Vdg Maximum drain to gate voltage ( Vd– Vg) +5 V Pin Maximum peak input power overdrive (2) +15 dBm Tch Maximum channel temperature 175 °C Ta Operating temperature range -40 to +85 °C Tstg Storage temperature range -55 to +125 °C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. |
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