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CHR2292 Scheda tecnica(PDF) 1 Page - United Monolithic Semiconductors |
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CHR2292 Scheda tecnica(HTML) 1 Page - United Monolithic Semiconductors |
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1 / 6 page ![]() CHR2292 Ref. : DSCHR22921201 -20-July-01 1/6 Specifications subject to change without notice Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 17-20GHz Integrated Down Converter GaAs Monolithic Microwave IC Description The CHR2292 is a multifunction chip which integrates a LO time two multiplier, a balanced cold FET mixer, and a RF LNA. It is designed for a wide range of applications, typically commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Main Features • Broadband performances : 17-20GHz • 13dB conversion gain • 4.0dB noise figure • 10dBm LO input power • -10dBm RF input power (1dB gain comp.) • Low DC power consumption, 110mA@3.5V • Chip size : 2.49 X 2.13 X 0.10 mm -20 -16 -12 -8 -4 0 4 8 12 16 20 12 14 16 18 20 22 24 2*LO Frequency (GHz) Gc_channel_inf_rf- Gc_channel_sup_rf- Gc_channel_inf_rf+ Gc_channel_sup_rf+ Conversion Gain for F_IF=1GHz (on wafer meas.) P_LO=+10dBm / P_RF= -20dBm Main Characteristics Tamb. = 25°C Parameter Min Typ Max Unit FRF RF frequency range 17 20 GHz FLO LO frequency range 7.5 10 GHz FIF IF frequency range 0.25 1.5 GHz Gc Conversion gain 13 dB ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! LO Q I GM GB VDM VDL GX VGA RF |
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