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PSDM33/05 Scheda tecnica(PDF) 1 Page - Powersem GmbH |
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PSDM33/05 Scheda tecnica(HTML) 1 Page - Powersem GmbH |
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1 / 2 page  Three Phase Rectifier Bridge PSDM 33/05 I D25 = 35 A with IGBT and Fast Recovery Diode V DSS = 500 V for Braking System R DS(on) = 0.12 Ω Ω Ω Ω Ω Features • High level of integration - only one power semiconductor module required • Isolation voltage 3000 V ∼ • Planar glass passivated chips • Ultrafast boost diode • Leads suitable for PC board soldering • Thermistor (optional) • UL registered, E 148688 Applications • Drive Inverters with brake system Advantages • Easy to mount with two screws • Space and weight savings • high temperature and power cycling capability • Small and light weight • 2 functions in one package POWERSEM GmbH, Walpersdorfer Str. 53 D - 91126 Schwabach Phone: 09122 - 9764 - 0 FAX: 09122 - 9764 - 20 ECO-PACTM 2 2005 POWERSEM reserves the right to change limits, test conditions and dimensions Data according to IEC 60747 refer to a single diode unless otherwise stated Preliminary Data Sheet V RSM V RRM Type (V) (V) 600 500 PSDM 33/05 MOSFET Symbol Test Conditions Maximum Ratings V DSS T VJ = 25 °C to 150 °C 500 V V DGR T VJ = 25 °C to 150 °C, RGS = 10 Ω 500 V V GS continuous ±20 V I D T S = 85 °C 24 A I D T S = 25 °C 35 A I DM T S = 25 °C, pulse width limited by T VJ 95 A P D T S = 85 °C 170 W I S V GS = 0 V, TS = 25 °C 24 A I SM V GS = 0 V, TS = 25 °C, pulse width limited by TVJ 95 A Symbol Test Conditions Characteristic Values T VJ = 25 °C, unless otherwise specified V DSS V GS = 0 V, ID = 2mA min. 500 V V GS(th) V DS = 20 V, ID = 20 mA min. 2 V V GS(th) V DS = 20 V, ID = 20 mA max. 5 V I GSS V GS = ±20 V, VDS = 0 V max. ±500 nA I DSS V DS = 500 V, VGS = 0 V max. 2 mA R DS(on) T VJ = 25 °C max. 0.12 Ω R Gint T VJ = 25 °C max. 1.5 Ω g fs V DS = 15 V, IDS = 12 A typ. 30 S V DS I DS = 24 V, V GS = 0 V max. 1.5 V t d(on) V DS = 250 V, IDS = 12 A, VGS = 10 V max. 100 ns t d(off) Zgen. = 1 Ω, L-load max. 220 ns C iss typ. 8.5 nF C oss V DS = 25 V, f = 1 MHz, VGS = 0 V typ. 0.9 nF C rss typ. 0.3 nF Q g V DS = 250 V, I D = 12 A, VGS = 10 V typ. 350 nC R thJH max. 0.38 K/W } } Module Symbol Test Conditions Maximum Ratings T VJ -40...+150 °C T JM 150 °C T stg -40...+150 °C V isol 50/60 Hz t = 1 min 3000 V ∼ Iisol ≤ 1 mA t = 1 s 3600 V ∼ M d Mounting torque (M 4) 1.5-2.0 Nm Weight typ. 24 g NTC optional Caution: These Devices are sensitive to electrostatic discharge. Users should observe proper ESD handling precautions. L M X V C K G H 1 2 E |
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