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HTF8A60 Scheda tecnica(PDF) 1 Page - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD |
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HTF8A60 Scheda tecnica(HTML) 1 Page - SHANTOU HUASHAN ELECTRONIC DEVICES CO.,LTD |
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1 / 3 page ![]() Shantou Huashan Electronic Devices Co.,Ltd. INSULATED TYPE TRIAC (TO-220F PACKAGE) █ Features * Repetitive Peak Off-State Voltage: 600V * R.M.S On-state Current(IT(RMS)=8A) * High Commutation dv/dt █ General Description The Triac HTF8A60 is suitable for AC switching application, phase control application such as heater control, motor control, lighting control, and static switching relay. █ Absolute Maximum Ratings(Ta=25℃) █ Electrical Characteristics(Ta=25℃) Symbol Items Min. Typ. Max. Unit Conditions IDRM Repetitive Peak Off-State Current 2.0 mA VD=VDRM, Single Phase,Half Wave, TJ=125℃ VTM Peak On-State Voltage 1.4 V IT=12A, Inst. Measurement I+GT1 Gate Trigger Current(Ⅰ) 30 mA VD=6V, RL=10 ohm I- GT1 Gate Trigger Current(Ⅱ) 30 mA VD=6V, RL=10 ohm I-GT3 Gate Trigger Current(Ⅲ) 30 mA VD=6V, RL=10 ohm V+ GT1 Gate Trigger Voltage(Ⅰ) 1.5 V VD=6V, RL=10 ohm V- GT1 Gate Trigger Voltage(Ⅱ) 1.5 V VD=6V, RL=10 ohm V- GT3 Gate Trigger Voltage(Ⅲ) 1.5 V VD=6V, RL=10 ohm VGD Non-Trigger Gate Voltage 0.2 V TJ=125℃,VD=1/2VDRM (dv/dt)c Critical Rate of Rise of Off-State Voltage at Commutation 10 V/µS TJ=125℃,VD=2/3VDRM (di/dt)c=-4A/ms IH Holding Current 15 mA Rth(j-c) Thermal Resistance 3.7 ℃ /W Junction to case Tstg——Storage Temperature……………………………………………………………… -40~125℃ Tj ——Operating Junction Temperature …………………………………………………… -40~125℃ PGM——Peak Gate Power Dissipation………………………………………………………………… 5W VDRM——Repetitive Peak Off-State Voltage………………………………………………………… 600V IT(RMS)——R.M.S On-State Current(Ta=89℃)………………………………………………… 8A VGM——Peak Gate Voltage………………………………………………………………… 10V I GM —— Peak Gate Current …………………………………………………………… 2.0A ITSM——Surge On-State Current (One Cycle, 50/60Hz,Peak,Non-Repetitive)…………………… 80/88A VISO——Isolation Breakdown Voltage (RMS.A.C.1 minute)………………………………… 1500V HTF8A60 1 2 3 TO-220F |
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