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APTM50DAM19G Scheda tecnica(PDF) 6 Page - Microsemi Corporation

Il numero della parte APTM50DAM19G
Spiegazioni elettronici  Boost chopper MOSFET Power Module
PDF  6 Pages
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Produttore elettronici  MICROSEMI [Microsemi Corporation]
Homepage  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTM50DAM19G Scheda tecnica(HTML) 6 Page - Microsemi Corporation

  APTM50DAM19G Datasheet HTML 1Page - Microsemi Corporation APTM50DAM19G Datasheet HTML 2Page - Microsemi Corporation APTM50DAM19G Datasheet HTML 3Page - Microsemi Corporation APTM50DAM19G Datasheet HTML 4Page - Microsemi Corporation APTM50DAM19G Datasheet HTML 5Page - Microsemi Corporation APTM50DAM19G Datasheet HTML 6Page - Microsemi Corporation  
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APTM50DAM19G
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Delay Times vs Current
td(on)
td(off)
0
20
40
60
80
100
20
60
100
140
180
220
260
ID, Drain Current (A)
VDS=333V
RG=1Ω
TJ=125°C
L=100µH
Rise and Fall times vs Current
tr
tf
0
20
40
60
80
100
120
20
60
100
140
180
220
260
ID, Drain Current (A)
VDS=333V
RG=1Ω
TJ=125°C
L=100µH
Hard
switching
ZCS
ZVS
0
50
100
150
200
250
300
350
400
0
20
40
60
80 100 120 140
ID, Drain Current (A)
Operating Frequency vs Drain Current
VDS=333V
D=50%
RG=1Ω
TJ=125°C
TC=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
Source to Drain Diode Forward Voltage
Switching Energy vs Current
Eon
Eoff
0
2
4
6
8
10
20
60
100
140
180
220
260
ID, Drain Current (A)
VDS=333V
RG=1Ω
TJ=125°C
L=100µH
Eon
Eoff
Eoff
0
2
4
6
8
10
12
14
16
02.557.5
10
12.5
Gate Resistance (Ohms)
Switching Energy vs Gate Resistance
VDS=333V
ID=163A
TJ=125°C
L=100µH
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.



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