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MDS150

150 Watts, 50 Volts, Pulsed

Avionics 1030 - 1090 MHz

GENERAL DESCRIPTION

The MDS150 is a high power COMMON BASE bipolar transistor.

It is

designed for MODE-S systems in the 1030 - 1090 MHz frequency band. The

transistor includes input prematch for broadband performance. The device has

gold thin-film metallization and diffused ballasting in a hermetically sealed

package for proven highest MTTF.

CASE OUTLINE

55AW Style 1

ABSOLUTE MAXIMUM RATINGS

Maximum Power Dissipation

Device Dissipation @25

350 W

Maximum Voltage and Current

60 V

3.5 V

4 A

Maximum Temperatures

Storage Temperature

-65 to +150

°C

Operating Junction Temperature

+200

°C

ELECTRICAL CHARACTERISTICS @ 25

°C

SYMBOL

CHARACTERISTICS

TEST CONDITIONS

MIN

TYP

MAX

UNITS

Power Out

150

W

Power Input

20

W

Power Gain

10

dB

η

c

Collector Efficiency

F = 1030, 1090 MHz

Vcc = 50 Volts

PW = Note 2

DF = Note 2

34

%

VSWR

1

Load Mismatch Tolerance

3:1

Pd

1

Pulse Droop

0.5

dB

Trise

1

Rise Time

100

nSec

FUNCTIONAL CHARACTERISTICS @ 25

°C

Emitter to Base Breakdown

Ie = 5 mA

3.5

V

Collector to Emitter Breakdown

Ic = 25 mA

60

V

Collector to Base Breakdown

Ic = 25 mA

60

V

DC – Current Gain

Vce = 5V, Ic = 500 mA

20

Thermal Resistance

0.5

°C/W

NOTE 1: AT RATED OUTPUT POWER AND PULSE CONDITIONS

NOTE 2: Burst: 0.5uS ON, 0.5uS OFF x 120, repeated every 6.4mS

Initial Release - August 2007 Rev. A