2SC2412 datasheet(1/2 Pages) RECTRON

Il numero della parte	2SC2412

Spiegazioni elettronici	SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN)

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Produttore elettronici	RECTRON [Rectron Semiconductor]

Homepage	http://www.rectron.com

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RECTRON

SEMICONDUCTOR

FEATURES

MECHANICAL DATA

* Case: Molded plastic

* Epoxy: UL 94V-O rate flame retardant

* Lead: MIL-STD-202E method 208C guaranteed

* Mounting position: Any

* Weight: 0.008 gram

SOT-23

2SC2412

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

OC ambient temperature unless otherwise specified.

0.118(3.00)

0.012(0.30)

0.020(0.50)

0.003(0.08)

0.006(0.15)

0.110(2.80)

0.019(2.00)

0.071(1.80)

0.100(2.55)

0.089(2.25)

0.020(0.50)

0.012(0.30)

0.043(1.10)

0.035(0.90)

0.004(0.10)

0.000(0.00)

TECHNICAL SPECIFICATION

SOT-23 BIPOLAR TRANSISTORS

TRANSISTOR(NPN)

2006-3

ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )

Emitter cut-off current (VEB= 7V, IC=0)

DC current gain (VCE= 6V, IC= 1mA)

Collector cut-off current (VCB= 60V, IE=0)

Collector-emitter saturation voltage (IC= 50mA, IB= 5mA)

Transition frequency (VCE= 12V, IC= 2mA, f= 100MHZ)

CHARACTERISTICS

SYMBOL

UNITS

-

0.1

560

m

A

m

A

V

MHz

Collector-base breakdown voltage (IC= 50mA, IE=0)

Collector-emitter breakdown voltage (IC= 1mA, IB=0)

Emitter-base breakdown voltage (IE= 50mA, IC=0)

CLASSIFICATION OF hFE(1)

RANK

Range

Marking

Q

120-270

180-390

BQ

BR

V(BR)CBO

V(BR)CEO

V(BR)EBO

IEBO

hFE

ICBO

VCE(sat)

fT

MAX.

-

TYP.

60

50

7

-

150

120

MIN.

Y

R

270-560

BS

0.055(1.40)

0.047(1.20)

-

0.1

-

0.4

BASE

EMITTER

COLLECTOR

*

Power dissipation

PCM :

0.2

W(Tamb=25OC)

Collector current

ICM :

0.15

A

Collector-base voltage

V(BR)CBO :

60

V

Operating and storage junction temperature range

TJ,Tstg: -55OCto+150OC

1

2

3

2

3

For capacitive load, derate current by 20%.

Single phase, half wave, 60 Hz, resistive or inductive load.

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