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BAV99 Scheda tecnica(PDF) 1 Page - Silicon Standard Corp. |
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BAV99 Scheda tecnica(HTML) 1 Page - Silicon Standard Corp. |
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1 / 2 page ![]() Surface-mount Dual Switching Diodes Voltage range 75 Volts www.SiliconStandard.com 1 of 2 BAV99 8/26/2004 Rev.1.01 Power Dissipation 350 mWatts FEATURES Fast switching speed Surface mount package ideally suited for automatic insertion For general purpose switching applications High conductance MECHANICAL DATA Case: SOT-23, Molded plastic Terminals: Matte tin plating Polarity: See diagram Marking: JE Weight: 0.008 gram (approx. ) SOT-23 Dimensions in inches and (millimeters) 0.020(0.51) 0.015(0.37) 0.055(1.40) 0.047(1.19) 0.098(2.50) 0.083(2.10) 0.024(0.61) 0.018(0.45) 0.007(0.178) 0.003(0.076) 0.024(0.61) 0.018(0.45) 0.080(2.05) 0.070(1.78) 0.041(1.05) 0.047(0.89) 0.120(3.05) 0.104(2.65) 0.006(0.15) 0.001(0.013) 0.043(1.10) 0.035(0.89) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. Parameter Symbol BAV99 Units Non-Repetitive Peak Reverse Voltage VRM 100 V Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 75 V RMS Reverse Voltage VR(RMS) 53 V Forward Continuous Current (Note 1) IFM 300 mA Average Rectifier Output Current (Note 1) Io 150 mA Non-Repetitive Peak Forward Surge Current @ t=1.0uS @ t=1.0S IFSM 2.0 1.0 A Power Dissipation (Note 1) Pd 350 mW Thermal Resistance Junction to Ambient Air (Note 1) Rthja 357 °C/W Operating and Storage Temperature Range TJ, TSTG -65 to + 150 °C Parameter Symbol Min Max Units Forward Voltage IF=1.0mA IF= 10mA IF = 50mA IF=150mA VF - 0.715 0.855 1.0 1.25 V Peak Reverse Current VR=75V VR=75V, Tj=150°C VR=25V, TJ=150°C VR=20V IR - 2.5 50 30 25 uA nA Junction Capacitance VR=0, f=1.0MHz Cj - 2.0 pF Reverse Recovery Time (Note 2) trr - 4.0 ns Notes: 1. Valid provided that terminals are kept at ambient temperature. 2. Reverse recovery test conditions: IF=IR=10mA, Irr=0.1 x IR, RL=100 Ω Pb-free lead finish (second-level interconnect). |
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