HFS4N65 datasheet(3/7 Pages) SEMIHOW

Il numero della parte	HFS4N65

Spiegazioni elettronici	650V N-Channel MOSFET

PDF	7 Pages

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Produttore elettronici	SEMIHOW [SemiHow Co.,Ltd.]

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◎ SEMIHOW REV.A0,April 2006

Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

Typical Characteristics

-1

100

200

300

400

500

600

700

800

900

iss = Cgs + Cgd (Cds = shorted)

oss = Cds + Cgd

rss = Cgd

※ Note ;

1. V

GS = 0 V

2. f = 1 MHz

rss

oss

iss

DS, Drain-Source Voltage [V]

※ Note : T

J = 25

℃

GS = 20V

GS = 10V

D , Drain Current [A]

DS = 325V

DS = 130V

DS = 520V

※ Note : I

D = 3.6A

G, Total Gate Charge [nC]

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