HFS7N80 datasheet(3/7 Pages) SEMIHOW

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◎ SEMIHOW REV.A0,July 2005

Figure 1. On Region Characteristics

Figure 2. Transfer Characteristics

Figure 3. On Resistance Variation vs

Drain Current and Gate Voltage

Figure 4. Body Diode Forward Voltage

Variation with Source Current

and Temperature

Figure 5. Capacitance Characteristics

Figure 6. Gate Charge Characteristics

Typical Characteristics

-1

-2

-1

Top :

15.0 V

10.0 V

8.0 V

7.0 V

6.5 V

6.0 V

Bottom : 5.5 V

※ Notes :

1. 250μ s Pulse Test

2. T

C = 25

℃

DS, Drain-Source Voltage [V]

-1

150

-55

※ Notes :

1. V

DS = 50V

2. 250μ s Pulse Test

GS, Gate-Source Voltage [V]

1.0

1.5

2.0

2.5

3.0

3.5

4.0

GS = 20V

GS = 10V

※ Note : T

J = 25

℃

D, Drain Current [A]

0.2

0.4

0.6

0.8

1.0

1.2

1.4

-1

150 ℃

※ Notes :

1. V

GS = 0V

2. 250μ s Pulse Test

25℃

SD, Source-Drain voltage [V]

-1

500

1000

1500

2000

2500

iss = Cgs + Cgd (Cds = shorted)

oss = Cds + Cgd

rss = Cgd

※ Notes :

1. V

GS = 0 V

2. f = 1 MHz

rss

oss

iss

DS, Drain-Source Voltage [V]

DS = 400V

DS = 160V

DS = 640V

※ Note : I

D = 7.0A

G, Total Gate Charge [nC]

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