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SSM4800AGM Scheda tecnica(PDF) 4 Page - Silicon Standard Corp.

Il numero della parte SSM4800AGM
Spiegazioni elettronici  N-Channel Enhancement Mode Power Mosfet
PDF  5 Pages
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Produttore elettronici  SSC [Silicon Standard Corp.]
Homepage  http://www.siliconstandard.com
Logo SSC - Silicon Standard Corp.

SSM4800AGM Scheda tecnica(HTML) 4 Page - Silicon Standard Corp.

  SSM4800AGM Datasheet HTML 1Page - Silicon Standard Corp. SSM4800AGM Datasheet HTML 2Page - Silicon Standard Corp. SSM4800AGM Datasheet HTML 3Page - Silicon Standard Corp. SSM4800AGM Datasheet HTML 4Page - Silicon Standard Corp. SSM4800AGM Datasheet HTML 5Page - Silicon Standard Corp.  
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02/09/2007 Rev.1.00
www.SiliconStandard.com
4
SSM4800AGM
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
Q
VG
4.5V
QGS
QGD
QG
Charge
0
4
8
12
16
0
5
10
15
Q G , Total Gate Charge (nC)
I D =9 A
V DS =25 V
V DS =20 V
V DS =15 V
10
100
1000
1
5
9
131721
2529
V DS , Drain-to-Source Voltage (V)
f=1.0MHz
C iss
C oss
C rss
0.001
0.01
0.1
1
0.0001
0.001
0.01
0.1
1
10
100
t , Pulse Width (s)
PDM
Duty factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthia=125 ℃/W
t
T
0.02
0.01
0.05
0.1
0.2
Duty factor=0.5
Single Pulse
0.01
0.1
1
10
100
0.1
1
10
100
V DS , Drain-to-Source Voltage (V)
T A =25
o C
Single Pulse
100us
1ms
10ms
100ms
1s
DC
0
20
40
60
02
46
V GS , Gate-to-Source Voltage (V)
T j =125
o C
T j =25
o C
V DS =5V



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