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SSM4816SM Scheda tecnica(PDF) 8 Page - Silicon Standard Corp. |
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SSM4816SM Scheda tecnica(HTML) 8 Page - Silicon Standard Corp. |
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8 / 9 page ![]() www.SiliconStandard.com 8 of 9 SSM4816SM Rev.1.01 4/16/2004 MOSFET-2 Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform td(on) tr td(off) t f VDS VGS 10% 90% 100 1000 10000 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) f=1.0MHz C iss C oss C rss Q VG 4.5V QGS QGD QG Charge 0 4 8 12 16 0 1020304050 Q G , Total Gate Charge (nC) V DS =15V V DS =20V V DS =24V I D =8A 0.01 0.1 1 10 100 0.1 1 10 100 V DS , Drain-to-Source Voltage (V) 1ms 10ms 100ms 1s DC T A =25 o C Single Pulse 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) PDM Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=100°C/W t T 0.02 0.01 0.05 0.1 0.2 Duty factore=0.5 Single Pulse |
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